Abstract—This paper presents a detailed analysis of the design,
fabrication, and testing of a high-isolation electrostatically
actuated capacitive shunt switch for X-band applications. The
dual-warped-beam switch’s RF performance is fine-tuned simultaneously
in the OFF and ON states by introducing warped bimetallic
beams to the switch’s edge to increase the effective capacitive area
in the downstate and to the switch’s center to decrease the effective
capacitive area in the upstate. As a result, the dual-warped-beam
switches demonstrate an off-to-on capacitive ratio of up to 170
without the need for thin dielectrics or high dielectric constant
materials, exhibiting excellent RF performance. High isolation at
X-band of less than 40 dB is also obtained with the introduction of
inductive meandered springs into the switch structure. This novel
tuning design mechanism for capacitive switches utilizing warped
bimetallic beams has the advantage of simplicity and flexibility
without the added complexity of using thinner dielectrics, tuned
circuits, or larger size. [2009-0097]
Index Terms—Coplanar waveguides, electrostatic devices, low
loss, microelectromechanical devices, switches.
REFERENCE：
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 19, NO. 3, JUNE 2010,
Reena Al-Dahleh, Member, IEEE, and Raafat R. Mansour, Fellow, IEEE
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RF-MEMS，模擬、分析和製作，透過彎曲的懸臂設計來提升元件的性能，例如：不需高介電材質其電容率即可達到170以上。
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